Villars-Burquin, Switzerland

Philippe Graber

This inventor holds 1 USPTO granted patent. Top assignee: Innovative Silicon Isi Sa. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Philippe Graber. Retrieved from https://idiyas.com/inventor/philippe-graber

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Philippe Graber

Introduction

Philippe Graber is a notable inventor based in Villars-Burquin, Switzerland. He has made significant contributions to the field of integrated circuit technology. His work primarily focuses on enhancing the functionality and efficiency of memory devices.

Latest Patents

Graber holds a patent for "Sense amplifier circuitry for integrated circuit having memory cell array, and method of operating same." This invention pertains to an integrated circuit device that includes a memory cell array with multiple memory cells, specifically those utilizing electrically floating body transistors. The sense amplifier circuitry is designed to sense the data state stored in one of the memory cells during a sense phase of operation. The circuitry incorporates first and second capacitors, a current source, and a transistor, which work together to improve the performance of memory devices.

Career Highlights

Philippe Graber is associated with Innovative Silicon Isi Sa, where he applies his expertise in integrated circuit design. His innovative approach has led to advancements in memory technology, making significant impacts in the industry.

Collaborations

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Conclusion

Philippe Graber's contributions to integrated circuit technology exemplify the spirit of innovation in the field. His patent on sense amplifier circuitry showcases his commitment to enhancing memory device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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