Sense amplifier circuitry for integrated circuit having memory cell array, and method of operating same

Abstract

An integrated circuit device (e.g., a logic device or a memory device) having (i) a memory cell array which includes a plurality of memory cells (for example, memory cells having electrically floating body transistors) and (ii) sense amplifier circuitry, coupled to the memory cell array, to sense a data state stored in one of the memory cells during a sense phase of operation. In one embodiment, the sense amplifier circuitry includes first and second capacitors, a first input electrically coupled to (i) the memory cell to receive a signal which is representative of the data state stored therein and (ii) a first terminal of the first capacitor, and a second input electrically coupled to (i) a first predetermined voltage and (ii) a first terminal of the second capacitor. The sense amplifier circuitry further includes a current source and a transistor wherein the gate of the transistor is electrically coupled to the second terminals of the first and second capacitors, and a first region of the transistor is electrically coupled to the current source.