Gilbert, AZ, United States of America

Peter B Harrington


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Gilbert, AZ (US) (2010 - 2011)
  • Sunnyvale, CA (US) (2022 - 2023)

Company Filing History:


Years Active: 2010-2023

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4 patents (USPTO):Explore Patents

Title: The Innovations of Peter B. Harrington

Introduction

Peter B. Harrington is a notable inventor based in Gilbert, AZ (US). He has made significant contributions to the field of memory systems, holding a total of 4 patents. His work focuses on enhancing the reliability and efficiency of memory components, which are crucial in various technological applications.

Latest Patents

One of his latest patents is titled "Analysis of memory sub-systems based on threshold distributions." This invention discloses a system that includes a memory component with multiple memory cells capable of existing in various states. Each state corresponds to a value stored by the memory cell. The system features a processing device that performs several operations, including obtaining distributions of threshold voltages for the memory cells, classifying these distributions, and generating a vector that represents the class of each distribution. The classifier then processes this vector to determine the likelihood of memory component failure within a specified time frame.

Career Highlights

Peter B. Harrington is currently employed at Micron Technology Incorporated, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the understanding and functionality of memory sub-systems.

Collaborations

Some of his notable coworkers include Toru Tanzawa and Aswin Thiruvengadam, who collaborate with him on various projects within the company.

Conclusion

Peter B. Harrington's contributions to memory technology through his patents and work at Micron Technology Incorporated highlight his role as a significant innovator in the field. His inventions are paving the way for more reliable memory systems in the future.

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