Company Filing History:
Years Active: 2009-2014
Title: Innovative Contributions of Perng-Fei Yuh
Introduction
Perng-Fei Yuh is a prominent inventor based in San Jose, California, known for his significant contributions to the field of technology, specifically in memory systems. With four patents to his name, his work focuses on innovations related to magnetic random access memory (MRAM) and its efficiency in data processing.
Latest Patents
Yuh's latest patents reflect his expertise in enhancing the performance of memory systems. One notable invention is the "Reference Averaging for MRAM Sense Amplifiers," which details a sense amplifier designed for reading signals from MRAMs. This invention involves utilizing a reference current developed from both programmed and non-programmed reference cells, allowing for improved signal accuracy by averaging currents across multiple sense amplifiers.
Another significant patent is the "Reference Cell Architectures for Small Memory Array Block Activation," where he outlines systems and methods to generate reference currents. This innovation aims to boost the reliability of sensing operations in segmented semiconductor memory arrays, particularly applicable in MRAMs. The embodiments highlight the use of a folded bit lines scheme, optimizing memory access and enhancing performance in segmented arrays.
Career Highlights
Throughout his career, Perng-Fei Yuh has worked with reputable companies such as Magic Technologies, Inc. and Headway Technologies, Incorporated. His contributions have played a crucial role in advancing technologies related to semiconductor memory, particularly in addressing challenges faced in data retrieval and reliability.
Collaborations
Yuh's innovative journey has been enriched by collaborations with noted professionals in the field, including his coworkers Lejan Pu and Po-Kang Wang. Working alongside experts, he has been able to refine his inventions and contribute to the collective advancement of technology in memory systems.
Conclusion
Perng-Fei Yuh's work in the realm of MRAM and semiconductor technology marks him as a key figure in innovation. His patents showcase not only his technical skills but also his commitment to improving memory system performance. As technology continues to evolve, Yuh's contributions will undoubtedly influence future developments in this vital area.