The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 06, 2012
Applicants:
Perng-fei Yuh, San Jose, CA (US);
Po-kang Wang, Los Altos, CA (US);
Lejan Pu, San Jose, CA (US);
Inventors:
Assignee:
Headway Technologies, Inc., Milpitas, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.