Hangzhou, China

Pengpeng Wang

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Hangzhou Hfc Semiconductor Co.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pengpeng Wang. Retrieved from https://idiyas.com/inventor/pengpeng-wang-nadpyj3m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Pengpeng Wang - Innovator in Semiconductor Technology

Introduction

Pengpeng Wang is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the efficiency and functionality of semiconductor memory devices.

Latest Patents

Wang holds a patent for a semiconductor memory device and a method for fabricating the same. This innovative device features a doped epitaxial silicon layer that is epitaxially grown on a surface of a silicon layer within a trench. This design allows for electrical connection between a transistor and a trench capacitor, showcasing his expertise in semiconductor fabrication.

Career Highlights

Wang is currently employed at Hangzhou Hfc Semiconductor Co., where he continues to develop cutting-edge technologies in the semiconductor industry. His work has positioned him as a key player in advancing semiconductor memory solutions.

Collaborations

Wang collaborates with talented colleagues, including Qiangtao Zhu and Fanyou Kong, who contribute to the innovative projects at Hangzhou Hfc Semiconductor Co.

Conclusion

Pengpeng Wang's contributions to semiconductor technology, particularly in memory devices, highlight his role as an influential inventor in the field. His ongoing work promises to drive further advancements in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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