The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
May. 02, 2024
Hangzhou Hfc Semiconductor Co., Hangzhou, CN;
Pengpeng Wang, Hangzhou, CN;
Haijiang Yuan, Hangzhou, CN;
Yongsheng Yang, Hangzhou, CN;
Chungchiang Lin, Hangzhou, CN;
HANGZHOU HFC SEMICONDUCTOR CO., Hangzhou, CN;
Abstract
An nFET device and a method for fabricating the device are disclosed, in the method a phosphorus-doped epitaxial silicon layer is formed by epitaxy. Additionally, trisilicon tetraphosphide (SiP) is present in a heavily phosphorus-doped epitaxial silicon layer formed in the phosphorus-doped epitaxial silicon layer by performing a secondary phosphorus ion implantation process and a laser annealing process on the phosphorus-doped epitaxial silicon layer. The heavily phosphorus-doped epitaxial silicon layer has a thickness ranging from 20 nm to 30 nm and the trisilicon tetraphosphide has a lattice constant smaller than that of silicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile