This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Hangzhou Hfc Semiconductor Co.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chungchiang Lin and Semiconductor Device Innovation.
Introduction
Chungchiang Lin is an inventor based in Hangzhou, China, associated with Hangzhou HFC Semiconductor Co. His listed patent concerns an nFET device and a method for fabricating it.
Latest Patents
Lin is credited with 1 patent: “nFET Device and Method for Fabricating Same.” The disclosed method forms a phosphorus-doped epitaxial silicon layer, then uses secondary phosphorus ion implantation and laser annealing to create a heavily phosphorus-doped epitaxial silicon layer. This layer is 20 to 30 nanometers thick and contains trisilicon tetraphosphide (Si₃P₄), which has a smaller lattice constant than silicon.
Career Highlights
The patent describes a semiconductor fabrication approach that combines epitaxy, ion implantation, and laser annealing to produce a phosphorus-rich layer for an nFET device. The available information identifies Lin’s association with Hangzhou HFC Semiconductor Co., but does not provide further details about his career.
Collaborations
Pengpeng Wang and Haijiang Yuan are identified as Lin’s coworkers. The available information does not specify their roles in the patent.
Conclusion
Chungchiang Lin’s listed patent focuses on a specialized process for forming a heavily phosphorus-doped layer in an nFET, highlighting his documented contribution to semiconductor device fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile