The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 15, 2024
Applicant:
Hangzhou Hfc Semiconductor Co., Hangzhou, CN;
Inventors:
Qiangtao Zhu, Hangzhou, CN;
Pengpeng Wang, Hangzhou, CN;
Fanyou Kong, Hangzhou, CN;
Tao Wang, Hangzhou, CN;
John H Zhang, Altamont, NY (US);
Assignee:
Hangzhou HFC Semiconductor Co., Hangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/373 (2023.02); H10B 12/0385 (2023.02);
Abstract
A semiconductor memory device and a method for fabricating the device are disclosed. In the semiconductor memory device, a doped epitaxial silicon layer epitaxially grown on a surface of a silicon layer within a trench electrically connects a transistor to a trench capacitor.
Zhu, Qiangtao. (2026). Semiconductor memory device and method for fabricating same (U.S. Patent No. 12740050). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740050
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile