Hangzhou, China

Fanyou Kong

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hangzhou Hfc Semiconductor Co.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fanyou Kong. Retrieved from https://idiyas.com/inventor/fanyou-kong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Fanyou Kong: Innovator in Semiconductor Technology

Introduction

Fanyou Kong is a prominent inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique semiconductor memory device.

Latest Patents

Fanyou Kong holds 1 patent for his invention titled "Semiconductor memory device and method for fabricating same." This patent describes a semiconductor memory device that features a doped epitaxial silicon layer, which is epitaxially grown on the surface of a silicon layer within a trench. This design allows for the electrical connection of a transistor to a trench capacitor, enhancing the performance of memory devices.

Career Highlights

Fanyou Kong is currently employed at Hangzhou HFC Semiconductor Co., where he continues to push the boundaries of semiconductor technology. His work at the company has been instrumental in advancing the development of innovative memory solutions.

Collaborations

Fanyou Kong collaborates with talented individuals in his field, including Qiangtao Zhu and Pengpeng Wang. Their combined expertise contributes to the success of their projects and the advancement of semiconductor technology.

Conclusion

Fanyou Kong is a notable inventor whose work in semiconductor memory devices showcases his innovative spirit and technical expertise. His contributions are paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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