This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hangzhou Hfc Semiconductor Co.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Qiangtao Zhu: Innovator in Semiconductor Technology
Introduction
Qiangtao Zhu is a prominent inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor memory device.
Latest Patents
Qiangtao Zhu holds a patent for a semiconductor memory device and a method for fabricating the same. This invention involves a semiconductor memory device where a doped epitaxial silicon layer is epitaxially grown on a surface of a silicon layer within a trench. This design electrically connects a transistor to a trench capacitor, showcasing his expertise in semiconductor fabrication.
Career Highlights
Qiangtao Zhu is currently employed at Hangzhou HFC Semiconductor Co. His role at the company allows him to further explore and develop innovative semiconductor technologies. His work has been instrumental in advancing the capabilities of memory devices in the semiconductor industry.
Collaborations
Some of his notable coworkers include Pengpeng Wang and Fanyou Kong. Their collaboration has contributed to the success of various projects within the company.
Conclusion
Qiangtao Zhu's contributions to semiconductor technology highlight his role as an influential inventor. His patent and work at Hangzhou HFC Semiconductor Co. demonstrate his commitment to innovation in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile