Pengliang Ci

Title: Pengliang Ci: Innovator in RF LDMOS Technology

Introduction

Pengliang Ci is a notable inventor based in Shanghai, China. He has made significant contributions to the field of radio frequency technology, particularly through his innovative work on RF LDMOS devices. His expertise and dedication to advancing semiconductor technology have positioned him as a key figure in the industry.

Latest Patents

Pengliang Ci holds a patent for an RF LDMOS device and its fabrication method. This invention involves a radio frequency laterally diffused metal oxide semiconductor (LDMOS) device, which features a lightly doped n-type drain region with a laterally non-uniform n-type dopant concentration distribution. This unique structure is achieved by forming a moderately n-type doped region that has a higher doping concentration and greater depth than the rest of the lightly doped n-type drain region. The design allows the RF LDMOS device to achieve both a high breakdown voltage and significantly reduced on-resistance.

Career Highlights

Pengliang Ci is currently employed at Shanghai Hua Hong NEC Electronics Company, Limited, where he continues to develop cutting-edge technologies in the semiconductor field. His work has been instrumental in enhancing the performance and efficiency of RF devices.

Collaborations

Throughout his career, Pengliang Ci has collaborated with talented professionals, including Juanjuan Li and Wensheng Qian. These partnerships have fostered innovation and contributed to the advancement of their shared projects.

Conclusion

Pengliang Ci's contributions to RF LDMOS technology exemplify his commitment to innovation in the semiconductor industry. His patent and ongoing work at Shanghai Hua Hong NEC Electronics Company, Limited highlight his role as a leading inventor in this field.