Company Filing History:
Years Active: 2019-2025
Title: Innovations of Peng Fei in Memory Technology
Introduction
Peng Fei is a notable inventor based in Shanghai, China, recognized for his contributions to memory technology. He holds a total of 4 patents that focus on enhancing memory command performance and calibration in memory devices. His work has significant implications for the efficiency and reliability of memory systems.
Latest Patents
One of Peng Fei's latest patents is titled "Memory command aggregation to improve sequential memory command performance." This patent describes a method where a memory subsystem controller receives a host read memory command referencing a set of logical block addresses. The controller converts these logical block addresses into physical block addresses and generates device read memory commands based on them. It also creates an aggregated device read memory command to optimize performance.
Another significant patent is related to "Memory devices with read level calibration." This invention includes a memory device with a controller and calibration circuitry that determines a read level offset value for a memory region. The calibration circuitry can obtain this value internally and output it to the controller, enhancing the accuracy of memory operations.
Career Highlights
Peng Fei is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to focus on innovative solutions that improve memory technology. His contributions are vital in advancing the capabilities of memory devices.
Collaborations
Throughout his career, Peng Fei has collaborated with notable colleagues, including Gary F Besinga and Michael G Miller. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in memory systems.
Conclusion
Peng Fei's work in memory technology exemplifies the importance of innovation in enhancing system performance. His patents reflect a commitment to improving memory command efficiency and calibration, which are crucial for the advancement of memory devices.