Pei-Ying Du

Title: Pei-Ying Du: Innovator in Multi-Gate Transistors and Phase Change Memory Devices

Introduction

Pei-Ying Du is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the fields of semiconductor technology and memory devices. With a total of 2 patents, his work has had a notable impact on the industry.

Latest Patents

Pei-Ying Du's latest patents include innovations in multi-gate transistors and high-endurance phase change memory devices. The multi-gate transistor patent describes a structure that includes a doped drain region, a doped source region, and a gate group with multiple gates. This design allows the transistor to behave equivalently as a PNPN structure, enhancing its performance. His patent on phase change memory devices addresses the challenges of set or reset failures, providing methods to improve endurance and reliability. By implementing a high current repair operation, the technology can recover memory cells that have experienced failures, thus extending their operational lifespan.

Career Highlights

Throughout his career, Pei-Ying Du has worked with notable companies such as Macronix International Co., Ltd. and IBM. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Pei-Ying Du has collaborated with talented individuals in his field, including Chao-I Wu and Ming-Hsiu Lee. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Pei-Ying Du's contributions to multi-gate transistors and phase change memory devices highlight his role as an influential inventor in the technology sector. His innovative patents and collaborations continue to shape the future of semiconductor technology.