The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
May. 19, 2020
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 29/788 (2006.01); G11C 11/56 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7887 (2013.01); G11C 11/5621 (2013.01); G11C 11/5671 (2013.01); H01L 29/7923 (2013.01);
Abstract
A multi-gate transistor includes: a doped drain region; a doped source region; a gate group including a first gate and a second gate; a channel, the doped drain region and the doped source region being on respective two sides of the channel; and an interlayer, formed between the channel and the gate group, wherein a first gate voltage and a second gate voltage are applied to the first gate and the second gate of the gate group, respectively, the channel is induced as at least a P sub-channel and at least an N sub-channel and the multi-gate transistor equivalently behaves as a PNPN structure.