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For the Inventor, By the Inventor

Hsinchu, Taiwan

Pei-Feng Sun

This inventor holds 6 USPTO granted patents. Top assignee: Mosel Vitelic Corporation. Active years: 2000-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pei-Feng Sun. Retrieved from https://idiyas.com/inventor/pei-feng-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 12(Granted Patents)


Location History:

  • KaoShiung, TW (2000)
  • Kaohsiung, TW (2002)
  • Hsinchu, TW (2004 - 2008)

Company Filing History:

goldMedal6 out of 442 
 
Mosel Vitelic Corporation
 patents

Years Active: 2000-2008

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6 patents (USPTO):Explore Patents
1. 7432204 - Wafer and the manufacturing and reclaiming methods thereof (2008-10-07),
2. 7282429 - Method of manufacturing Schottky diode device (2007-10-16),
3. 6991994 - Method of forming rounded corner in trench (2006-01-31),
4. 6828196 - Trench filling process for preventing formation of voids in trench (2004-12-07),
5. 6492248 - Few-particle-induced low-pressure TEOS process (2002-12-10),
6. 6147013 - Method of LPCVD silicon nitride deposition (2000-11-14),

Title: Pei-Feng Sun: Innovator in Semiconductor Technology

Pei-Feng Sun is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving manufacturing processes and enhancing the efficiency of semiconductor devices.

Latest Patents

Pei-Feng Sun's latest patents include innovative methods for wafer manufacturing and reclaiming. One of his patents describes a wafer that consists of a semiconductor substrate and a protective layer. The reclaiming method he developed aims to prevent damage to the substrate during the reclaiming process, thereby increasing the reclaiming rate of the wafer. Another significant patent involves a method for manufacturing Schottky diode devices. This method introduces a poly oxide layer to prevent photoresist lifting issues, enhancing the overall manufacturing process.

Career Highlights

Throughout his career, Pei-Feng Sun has worked with prominent companies in the semiconductor industry, including Mosel Vitelic Corporation and Mosel Vitelec, Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Pei-Feng Sun has collaborated with several professionals in his field, including Yi Fu Chung and Jen Chieh Chang. These collaborations have likely fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Pei-Feng Sun's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for advancements in semiconductor manufacturing and device efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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