The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Aug. 13, 2004
Applicants:

Jen Chieh Chang, Hsinchu, TW;

Yi Fu Chung, Hsinchu, TW;

Pei-feng Sun, Hsinchu, TW;

Inventors:

Jen Chieh Chang, Hsinchu, TW;

Yi Fu Chung, Hsinchu, TW;

Pei-Feng Sun, Hsinchu, TW;

Assignee:

Mosel Vitelic, Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 23/12 (2006.01); H01L 21/469 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having a semiconductor substrate, a protective layer formed on the semiconductor substrate, and a polysilicon layer formed on the protective layer; and removing the polysilicon layer. The wafer and the reclaiming method of the wafer can prevent the substrate of the wafer from being destroyed during the reclaiming process and increase the reclaiming rate of the wafer.


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