The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Aug. 19, 2005
Shih-chi Lai, Hsinchu, TW;
Pei-feng Sun, Hsinchu, TW;
Yi Fu Chung, Hsinchu, TW;
Jen Chieh Chang, Hsinchu, TW;
Shih-Chi Lai, Hsinchu, TW;
Pei-Feng Sun, Hsinchu, TW;
Yi Fu Chung, Hsinchu, TW;
Jen Chieh Chang, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing the polysilicon layer to form a poly oxide layer on the polysilicon layer; (d) forming and defining a photoresist layer on the poly oxide layer for exposing parts of the poly oxide layer; (e) etching the poly oxide layer, the polysilicon layer and the gate oxide layer via the photoresist layer for forming a poly oxide structure, a polysilicon structure and a gate oxide structure; and (f) removing the photoresist layer. The present invention introduces a poly oxide layer instead of the CVD oxide for preventing the photoresist lifting issue.