Jhubei, Taiwan

Pei-Chun Liao

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Jubei, TW (2007)
  • Jhubei, TW (2008 - 2009)
  • Hsinchu, TW (2024)

Company Filing History:


Years Active: 2007-2025

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7 patents (USPTO):Explore Patents

Title: Biography of Inventor Pei-Chun Liao

Introduction: Pei-Chun Liao is a prominent inventor based in Jhubei, Taiwan. She has made significant contributions to the field of memory technology, holding a total of seven patents. Her innovative work focuses on phase-change memory cells and their fabrication methods.

Latest Patents: Among her latest patents is a phase-change memory cell and method for fabricating the same. This invention includes a first electrode, a second electrode, and a phase-change feature that changes its data state based on a write operation. The write operation consists of a reset stage and a set stage, utilizing current pulses with varying amplitudes. Another notable patent is a memory device and method for operating the same, which includes a memory array, a driver circuit, and a recover circuit designed to enhance memory cell performance.

Career Highlights: Pei-Chun Liao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where she continues to advance her research and development in memory technologies. Her work has been instrumental in improving the efficiency and reliability of memory devices.

Collaborations: Throughout her career, Pei-Chun has collaborated with esteemed colleagues such as Yung-Huei Lee and Jian-Hong Lin. These collaborations have fostered a productive environment for innovation and technological advancement.

Conclusion: Pei-Chun Liao's contributions to the field of memory

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