The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Aug. 31, 2007
Sheng-hui Liang, Hsin-Chu, TW;
Chia-lin Chen, Jhubei, TW;
Pei-chun Liao, Jhubei, TW;
Chin-yuan Ko, Hsinchu, TW;
Sheng-Hui Liang, Hsin-Chu, TW;
Chia-Lin Chen, Jhubei, TW;
Pei-Chun Liao, Jhubei, TW;
Chin-Yuan Ko, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Science-Based Industrial Park, TW;
Abstract
A method for testing a batch of semiconductor devices in wafer level is provided. The method includes the following steps: (a) obtaining a breakdown voltage of gate dielectric of each semiconductor device; (b) applying, to the gate dielectric of each semiconductor device, a stress voltage below the breakdown voltage but above a base voltage of gate dielectric of the semiconductor devices; (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at the base voltage; and (d) obtaining a tailing distribution from the measured currents.