Lawrenceville, NJ, United States of America

Paul H Robinson


Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 102(Granted Patents)


Location History:

  • Trenton, NJ (US) (1976 - 1977)
  • Lawrenceville, NJ (US) (1978 - 1987)
  • Lawrence Township, Mercer County, NJ (US) (1987)

Company Filing History:


Years Active: 1976-1987

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6 patents (USPTO):Explore Patents

Title: The Innovations of Paul H Robinson

Introduction

Paul H Robinson is a notable inventor based in Lawrenceville, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Robinson's latest patents is a method for increasing the switching speed of a semiconductor device. This method involves decreasing the turnoff time in a crystalline semiconductor region by initially providing a semiconductor region with a predetermined density of pinning centers. The semiconductor region is then irradiated to yield crystal damage equivalent to or greater than that produced by irradiating with 1 MeV neutrons at a fluence greater than approximately 10^13 cm^-2. Following this, the region is annealed at a temperature of approximately 350 to 450 degrees Celsius for about 15 minutes to one hour. This process results in a density of stable recombination centers that correlates with the pinning centers, providing a stable minority carrier lifetime within the semiconductor region.

Another significant patent by Robinson addresses the inhibition of autodoping in epitaxial layers from heavily doped substrates. This innovation prevents contamination of lightly doped epitaxial growing films by providing a thick film of silicon on the susceptor for CVD processing in an RF powered reactor. The susceptor film serves as a silicon seal to the rear surface of the substrate, inhibiting the outdiffusion of dopants that could contaminate the epitaxial film. For instance, substrates heavily doped with arsenic, phosphorus, or boron at concentrations of 10^19 atoms/cc are effectively inhibited from contaminating epitaxial films of silicon that are lightly doped with the same dopant at 10^14 atoms/cc.

Career Highlights

Paul H Robinson is currently associated with RCA Inc., where he continues to innovate in the semiconductor field. His work has had a profound impact on the efficiency and reliability of semiconductor devices, making him a respected figure in the industry.

Collaborations

Robinson has collaborated with notable colleagues such as Henry Kressel and Robert V D'Aiello, contributing to advancements in semiconductor technology.

Conclusion

Paul H Robinson's contributions to semiconductor technology through his innovative patents have significantly advanced the field. His work continues to influence the development of more efficient and reliable semiconductor devices

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