The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 1987

Filed:

Oct. 07, 1985
Applicant:
Inventors:

Alvin M Goodman, Princeton Township, Mercer County, NJ (US);

Lawrence A Goodman, Plainsboro, NJ (US);

John P Russell, Hopewell Township, Mercer County, NJ (US);

Paul H Robinson, Lawrence Township, Mercer County, NJ (US);

Assignee:

RCA Corporation, Princeton, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 17 ; 148D / ; 357 91 ; 437247 ; 437-8 ;
Abstract

A method for decreasing the turnoff time in a crystalline semiconductor region within a semiconductor device comprises initially providing a semiconductor region having a predetermined density of pinning centers. The semiconductor region is then irradiated so as to yield crystal damage that is equivalent to or greater than that which would be produced by irradiating with 1 MeV neutrons at a fluence greater than approximately 10.sup.13 cm.sup.-2. The region is then annealed at a temperature of approximately 350.degree. to 450.degree. C. for approximately 15 minutes to one hour so as to yield a density of stable recombination centers correlating with the pinning centers that provides a stable minority carrier lifetime within the semiconductor region.


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