The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1976
Filed:
May. 28, 1974
Applicant:
Inventors:
Norman Goldsmith, East Brunswick, NJ (US);
Paul Harvey Robinson, Trenton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C01B / ;
U.S. Cl.
CPC ...
148175 ; 156 17 ; 156611 ; 156612 ; 156613 ; 423349 ; 423350 ;
Abstract
Epitaxial layers of silicon, having thicknesses of at least about 25 .mu.m, are grown on the (100) or (111) planar surfaces of silicon substrates by the vapor deposition of silicon from the reaction of dichlorosilane and hydrogen gas in a reactor furnace. Good epitaxial layers of silicon of substantially uniform thicknesses are formed on the substrates when the growth rate of the epitaxial layer is between about 5 and 20 .mu.m/minute in the reactor furnace, and the latter is heated to a temperature of between about 1050.degree. and 1200.degree.C.