The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1987
Filed:
Nov. 12, 1985
Gary W Looney, Bordentown, NJ (US);
Paul H Robinson, Lawrenceville, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
Heavily doped substrates of silicon wafers are inhibited from contaminating by autodoping phenomenon lightly doped epitaxial growing films by providing a thick film of silicon on the susceptor for CVD processing in an RF powered reactor. The susceptor film of silicon serves to provide a silicon seal to the rear surface of the substrate to prevent or at least inhibit outdiffusion of dopants that can contaminate the epitaxial film. For example, substrates heavily doped with arsenic, phosphorus or boron at concentrations of 10.sup.19 atoms/cc are inhibited from autodoping contaminating epitaxial films of silicon lightly doped with the same dopant at 10.sup.14 atoms/cc.