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For the Inventor, By the Inventor

Boise, ID, United States of America

Paul Grisham

USPTO Granted Patents = 7 

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 47(Granted Patents)


Company Filing History:

goldMedal7 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2011-2017

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7 patents (USPTO):Explore Patents
1. 9786544 - Floating body memory cell apparatus and methods (2017-10-10),
2. 8987834 - Methods of providing electrical isolation and semiconductor structures including same (2015-03-24),
3. 8803213 - Floating body memory cell apparatus and methods (2014-08-12),
4. 8409946 - Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells (2013-04-02),
5. 8222102 - Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells (2012-07-17),
6. 8148775 - Methods of providing electrical isolation and semiconductor structures including same (2012-04-03),
7. 7939403 - Methods of forming a field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells (2011-05-10),

Title: Paul Grisham: Innovator in Semiconductor Technology

Introduction

Paul Grisham is a notable inventor based in Boise, ID (US), recognized for his contributions to semiconductor technology. With a total of 7 patents to his name, Grisham has made significant advancements in memory cell apparatus and methods.

Latest Patents

Among his latest innovations is the "Floating body memory cell apparatus and methods." This invention includes a base and a memory cell that consists of a body, a source, and a drain, with an insulation material that electrically isolates these components. The body is designed to store information, utilizing bulk semiconductor material for both the base and the body. Another significant patent is focused on "Methods of providing electrical isolation and semiconductor structures including same." This patent describes methods for isolating gates in a semiconductor structure, employing spacer materials and specific etch characteristics to enhance the effective gate length and field gate oxide.

Career Highlights

Grisham is currently employed at Micron Technology Incorporated, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing new technologies that enhance memory storage capabilities.

Collaborations

Throughout his career, Grisham has collaborated with esteemed colleagues, including Gordon A Haller and Sanh D Tang, contributing to a dynamic and innovative work environment.

Conclusion

Paul Grisham stands out as a key figure in the field of semiconductor technology, with a strong portfolio of patents that reflect his innovative spirit and dedication to advancing the industry. His contributions continue to shape the future of memory technology.

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