The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Feb. 04, 2010
Applicants:

Brent D. Gilgen, Boise, ID (US);

Paul Grisham, Boise, ID (US);

Werner Juengling, Boise, ID (US);

Richard H. Lane, Boise, ID (US);

Inventors:

Brent D. Gilgen, Boise, ID (US);

Paul Grisham, Boise, ID (US);

Werner Juengling, Boise, ID (US);

Richard H. Lane, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of isolating gates in a semiconductor structure. In one embodiment, isolation is achieved using a spacer material in combination with fins having substantially vertical sidewalls. In another embodiment, etch characteristics of various materials utilized in fabrication of the semiconductor structure are used to increase an effective gate length ('L') and a field gate oxide. In yet another embodiment, a V-shaped trench is formed in the semiconductor structure to increase the Land the field gate oxide. Semiconductor structures formed by these methods are also disclosed.


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