Winooski, VT, United States of America

Paul A Rabidoux


Average Co-Inventor Count = 4.9

ph-index = 20

Forward Citations = 1,085(Granted Patents)


Company Filing History:


Years Active: 1999-2007

where 'Filed Patents' based on already Granted Patents

38 patents (USPTO):

Title: Innovations in Semiconductor Technology by Paul A Rabidoux

Introduction

Paul A. Rabidoux, based in Winooski, Vermont, is an accomplished inventor with an impressive portfolio of 38 patents. His groundbreaking work primarily focuses on advancements in semiconductor technology, particularly in transistor design and fabrication methods. His insights and innovations have significantly contributed to high-density integration in electronic devices.

Latest Patents

Among his latest innovations, Rabidoux has developed a patent for a Vertical Dual Gate Field Effect Transistor. This invention presents a method of manufacturing a vertical transistor that is particularly suitable for high-density integration. It features potentially independent gate structures on opposite sides of a semiconductor pillar. The manufacturing method includes selective etching and epitaxial growth techniques to create a robust device architecture.

Additionally, Rabidoux has patented a method for selective trimming of gate structures and the associated apparatus. This method involves forming a polysilicon gate conductor on a semiconductor substrate and subsequently trimming it using either selective surface oxidation or nitridation methods. This innovation allows for precise control over the electrical characteristics of both n-channel and p-channel devices, enhancing the performance of transistors in various applications.

Career Highlights

Throughout his career, Rabidoux has made significant contributions while working for renowned companies like International Business Machines Corporation (IBM). His role at IBM has allowed him to explore and develop pioneering technologies that have laid the groundwork for advancements in the semiconductor industry.

Collaborations

Paul Rabidoux has collaborated with notable professionals in the field, including Steven J. Holmes and Mark Charles Hakey. These collaborations have fostered an environment of innovation and have led to the successful development of several cutting-edge technologies.

Conclusion

Paul A. Rabidoux's contributions to semiconductor technology through his 38 patents exemplify his commitment to innovation in the field. His latest inventions, particularly in vertical transistors and gate trimming methods, demonstrate the potential for continued advancements in high-density electronic applications. As he continues to push the boundaries of semiconductor technology, Rabidoux remains a significant figure in the landscape of modern inventions.

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