Singapore, Singapore

Patrick Guo Qiang Lo

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: Agency for Science, Technology and Research, Advanced Micro Foundry Pte. Ltd.. Active years: 2007-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Patrick Guo Qiang Lo. Retrieved from https://idiyas.com/inventor/patrick-guo-qiang-lo-n0a4g5cm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2007-2024

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3 patents (USPTO):Explore Patents

Title: Innovations of Patrick Guo Qiang Lo

Introduction

Patrick Guo Qiang Lo is a notable inventor based in Singapore, recognized for his contributions to the field of semiconductor technology. He holds three patents that showcase his innovative approach to electro-optic devices and MOSFET structures. His work has significantly impacted the development of advanced photonic chips and semiconductor manufacturing processes.

Latest Patents

One of his latest patents is the "Hybrid CMOS compatible electro-optic device." This invention involves a hybrid photonic chip that integrates various semiconductor materials to create a chip capable of performing specific functions. The design includes a first part made from materials suitable for CMOS fabrication and a second part composed of non-linear crystal material, which is not subjected to etching. This configuration supports a propagating low-loss single mode, enhancing the efficiency of optical devices.

Another significant patent is the "Fully salicided (FUCA) MOSFET structure." This patent describes a method for creating a MOSFET with a fully silicided gate electrode and raised source/drain elements that are nearly coplanar. This design allows for a wider process margin when forming contacts to the silicided regions. The process involves forming an insulator block layer over STI regions and using a conformal silicidation stop layer. The resulting structure improves the performance and reliability of MOSFET devices.

Career Highlights

Patrick has worked with prominent organizations such as the Agency for Science, Technology and Research and Advanced Micro Foundry Pte. Ltd. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Patrick has collaborated with talented individuals, including Wei Yip Loh and Ranganathan Nagarajan. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Patrick Guo Qiang Lo is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment to innovation and excellence, making him a valuable contributor to the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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