This inventor holds 1 USPTO granted patent. Top assignee: Matra Mhs. Active years: 1995.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1995
Title: Patrick D Rabinzohn: Innovator in Integrated Circuit Technology
Introduction
Patrick D Rabinzohn is a notable inventor based in Pont-Saint-Martin, France. He has made significant contributions to the field of integrated circuit technology. His innovative approach has led to the development of a unique method that enhances the etching process in semiconductor manufacturing.
Latest Patents
Rabinzohn holds a patent for a "Method for controlling the etching profile of a layer of an integrated circuit." This invention addresses the challenges associated with slope etching a layer of an integrated circuit. The process involves coating the layer to be etched with a masking photoresist layer. It combines passivation of the etching flank and nonisotropic erosion of the masking layer, allowing for precise control over the slope of the etching flank.
Career Highlights
Patrick D Rabinzohn is associated with Matra MHS, where he applies his expertise in integrated circuit technology. His work has been instrumental in advancing the methods used in semiconductor fabrication. His innovative solutions have contributed to the efficiency and effectiveness of the etching processes in the industry.
Collaborations
Due to space constraints, the collaborations section has been omitted.
Conclusion
Patrick D Rabinzohn's contributions to integrated circuit technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the semiconductor industry positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile