The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
Aug. 05, 1992
Applicant:
Inventor:
Patrick D Rabinzohn, Pont-Saint-Martin, FR;
Assignee:
Matra MHS, Nantes, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 437229 ; 437187 ; 437225 ; 156664 ; 156665 ;
Abstract
The invention concerns a process for slope etching a layer of an integrated circuit. The layer to be etched is coated with a masking photoresist layer. The process consists of jointly performing a passivation of the etching flank of the layer to be etched and a nonisotropic erosion of the masking photoresist layer, which makes it possible to control the slope of the etching flank of the layer to be etched.
Rabinzohn, Patrick. (1995). Method for controlling the etching profile of a layer of an integrated (U.S. Patent No. 5378309). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5378309
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile