Gross-Zimmern, Germany

Oktay Yilmazoglu

This inventor holds 3 USPTO granted patents and 3 published patent applications and 5 EPO patents. Top assignees: Technical University of Darmstadt, Technische Universitaet Darmstadt. Active years: 2019-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Oktay Yilmazoglu. Retrieved from https://idiyas.com/inventor/oktay-yilmazoglu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.4

ph-index = 1


Location History:

  • Gross-Zimmern, DE (2019)
  • Groß-Zimmern, DE (2024)

Company Filing History:


Years Active: 2019-2024

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3 patents (USPTO):Explore Patents

Title: Oktay Yilmazoglu: Innovator in Gunn Diode Technology

Introduction

Oktay Yilmazoglu is a notable inventor based in Gross-Zimmern, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gunn diodes. With a total of 3 patents to his name, Yilmazoglu's work is recognized for its innovative approaches and practical applications.

Latest Patents

Yilmazoglu's latest patents include groundbreaking inventions related to Gunn diodes. One of his patents describes a Gunn diode that consists of a first contact layer, a second contact layer, and an active layer made from gallium nitride (GaN) semiconductor material. This design features a base surface and a side surface that are non-parallel, allowing for enhanced electrical performance. Additionally, the patent mentions the potential use of aluminum indium gallium nitride (AlInGaN) materials as the active layer.

Another significant patent focuses on a Gunn diode designed for generating terahertz radiation. This invention includes a first contact layer, a second contact layer, and an active layer based on GaN semiconductor material. The active layer is strategically formed between the first and second contact layers, with a substrate supporting the entire structure. An optical inlet for a laser is also incorporated to facilitate charge carrier transfer through laser irradiation, enhancing the diode's functionality.

Career Highlights

Throughout his career, Oktay Yilmazoglu has worked with prestigious institutions, including Technische Universität Darmstadt. His experience in academia has allowed him to contribute to cutting-edge research and development in semiconductor technologies.

Collaborations

Yilmazoglu has collaborated with notable colleagues such as Ahid S Hajo and Sandeep Yadav. These partnerships have fostered innovation and have been instrumental in advancing their shared research goals.

Conclusion

Oktay Yilmazoglu's contributions to the field of Gunn diode technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of semiconductor materials and their applications, positioning him as a key figure in this area of research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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