The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Aug. 23, 2019
Technische Universitat Darmstadt, Darmstadt, DE;
Oktay Yilmazoglu, Groß-Zimmern, DE;
Ahid S. Hajo, Darmstadt, DE;
Technische Universität Darmstadt, Darmstadt, DE;
Abstract
The invention relates to a Gunn diode comprising a first contact layer (); a second contact layer (); an active layer () based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer () and the second contact layer (); a substrate () on which the active layer () is formed together with the first contact layer () and the second contact layer (); and an optical inlet () for a laser () in order to facilitate or trigger a charge carrier transfer between extrema () of the energy bands of the active layer () by means of laser irradiation.