Technical University of Darmstadt

Technische Universitaet Darmstadt

Oktay Yilmazoglu

Ahid S Hajo

Joerg Schneider

Sandeep Yadav

Deniz Cicek

A Gunn diode is disclosed which comprises a first contact layer, a second contact layer, and an active layer based on a gallium nitride (GaN) semiconductor material having a base surface and a side surface non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer electrically contacts the side surface to form a side contact. The second contact layer forms an electrical contact for the base surface, so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer and the second contact layer at the side contact.

Gunn diode and method of manufacturing the same

The invention relates to a Gunn diode comprising a first contact layer (); a second contact layer (); an active layer () based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer () and the second contact layer (); a substrate () on which the active layer () is formed together with the first contact layer () and the second contact layer (); and an optical inlet () for a laser () in order to facilitate or trigger a charge carrier transfer between extrema () of the energy bands of the active layer () by means of laser irradiation.

Gunn diode and method for generating a terahertz radiation

The subject of the invention is a spring sensor element, comprising carbon nanotubeson a carrier, wherein the carbon nanotubesare arranged in CNT blocks, wherein the carbon nanotubesof each CNT blockpreferably have the same length and the same alignment with respect to the carrier, wherein at least the highest one of the CNT blocksis arranged nearby at least two electric contacts. The spring sensor elementhas at least one additional neighboring CNT blockof the height Hin addition to the first CNT blockof the height H, wherein the heights Hand Hdiffer by a factor of at least 2.

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Oktay Yilmazoglu