Norman Godinho

Title: Innovations of Norman Godinho

Introduction

Norman Godinho is a prominent inventor based in Los Altos Hills, California. He has made significant contributions to the field of integrated circuits, holding a total of eight patents. His work focuses on enhancing the efficiency and packing density of MOS transistors used in integrated circuits.

Latest Patents

One of his latest patents is for a self-aligning contact and interconnect structure. This innovation allows for higher packing density in MOS transistors used in integrated circuits. The design features self-aligning source and drain contacts that overlap the gate while being insulated to prevent short circuits. The use of oxide insulation and a layer of silicon nitride above the gate ensures the integrity of the circuit. Additionally, contacts to the gate are strategically placed over the active region of the transistor, protected during the etching process. The incorporation of titanium silicide for contact protection further enhances the reliability of the interconnects.

Career Highlights

Norman Godinho has been instrumental in advancing technologies at Paradigm Technology, Inc. His expertise in integrated circuit design has positioned him as a key figure in the industry. His innovative approaches have led to significant improvements in the performance and reliability of electronic devices.

Collaborations

Throughout his career, Norman has collaborated with notable colleagues, including Hsiang-Wen Chen and Richard F Motta. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Norman Godinho's contributions to the field of integrated circuits through his patents and collaborations highlight his role as a leading inventor. His work continues to influence the advancement of technology in significant ways.