The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Mar. 25, 1993
Norman Godinho, Los Altos Hills, CA (US);
Hai-Pyng Liaw, Cupertino, CA (US);
Paradigm Technology, Inc., San Jose, CA (US);
Abstract
An oxynitride passivation layer and/or fuse protective layer for an SRAM cell having load resistors, where the composition of the oxynitride layer minimizes the effect of hydrogen diffusion on the resistance of underlying load resistors. The index of refraction of the oxynitride is between 1.60 and 1.85. This oxynitride does not substantially diffuse hydrogen into the load resistors even when heated to temperatures over 400.degree. C., and hence, avoids altering resistance during subsequent annealing steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile