Hai-Pyng Liaw

Title: Innovations by Hai-Pyng Liaw

Introduction

Hai-Pyng Liaw is an accomplished inventor based in Cupertino, CA (US). He has made significant contributions to the field of integrated circuits, particularly through his innovative patent. His work focuses on enhancing the performance and reliability of SRAM cells.

Latest Patents

Liaw holds a patent for an "Oxynitride fuse protective/passivation film for integrated circuit." This invention features an oxynitride passivation layer and/or fuse protective layer designed for SRAM cells with load resistors. The unique composition of the oxynitride layer minimizes the impact of hydrogen diffusion on the resistance of the underlying load resistors. The index of refraction of this oxynitride ranges between 1.60 and 1.85. Notably, this oxynitride does not significantly diffuse hydrogen into the load resistors, even when subjected to temperatures exceeding 400 degrees Celsius. This characteristic helps maintain the resistance during subsequent annealing steps.

Career Highlights

Liaw is currently employed at Paradigm Technology, Inc., where he continues to develop innovative solutions in the field of integrated circuits. His expertise and dedication to research have positioned him as a valuable asset to his company.

Collaborations

One of his notable coworkers is Norman Godinho, with whom he collaborates on various projects within the company.

Conclusion

Hai-Pyng Liaw's contributions to the field of integrated circuits through his innovative patent demonstrate his commitment to advancing technology. His work not only enhances the performance of SRAM cells but also ensures their reliability in various applications.