Norman Ahlquist

Title: The Innovations of Norman Ahlquist

Introduction

Norman Ahlquist is a notable inventor based in Menlo Park, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS (Metal-Oxide-Semiconductor) devices. His innovative approaches have paved the way for advancements in electronic circuits.

Latest Patents

Ahlquist holds a patent for a method of making MOS devices by forming self-aligned polysilicon. This process involves creating MOS circuits that include underlying polysilicon members, such as gate members covered with metal. In one embodiment, a self-aligning tungsten process is utilized to cover the polysilicon members. The method incorporates low-temperature 'rear end' steps to prevent deterioration of the underlying metal. For instance, a plasma nitride protective layer is employed to safeguard the metal. The combination of polysilicon and metal members results in reduced resistance and increased speed of the resultant MOS circuits. He has 1 patent to his name.

Career Highlights

Norman Ahlquist has had a distinguished career at Intel Corporation, where he has contributed to various projects and innovations in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

Ahlquist has collaborated with notable colleagues, including Paolo Gargini and Israel Beinglass. These partnerships have fostered a creative environment that has led to significant advancements in their field.

Conclusion

Norman Ahlquist's contributions to the semiconductor industry exemplify the impact of innovative thinking in technology. His patent for the method of making MOS devices showcases his commitment to advancing electronic circuit design. His work continues to influence the development of faster and more efficient electronic devices.