The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1984
Filed:
Jun. 29, 1981
Applicant:
Inventors:
Paolo Gargini, Palo Alto, CA (US);
Israel Beinglass, Santa Clara, CA (US);
Norman Ahlquist, Menlo Park, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148-15 ; 148187 ; 357 59 ; 357 91 ; 427 88 ; 427 89 ;
Abstract
A process is described for forming MOS circuits which include underlying polysilicon members such as gate members covered with metal. In one embodiment, a self-aligning tungsten process is used to cover the polysilicon members. Low temperature 'rear end' steps are used to prevent deterioration of the underlying metal. For example, a plasma nitride protective layer is used to cover the metal. The polysilicon/metal members provide reduced resistance and increase the speed of the resultant MOS circuits.