Tokyo, Japan

Norio Hosoya

This inventor holds 1 USPTO granted patent. Top assignee: Renesas Technology Corp.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norio Hosoya. Retrieved from https://idiyas.com/inventor/norio-hosoya-x1hsjgbq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Inventor Norio Hosoya

Introduction

Norio Hosoya, based in Tokyo, Japan, is a notable inventor recognized for his contributions to semiconductor technology. With a keen focus on enhancing device capabilities, he has secured a patent that addresses critical aspects of semiconductor manufacturing. His innovative work is essential in advancing the performance of integrated devices.

Latest Patents

Norio Hosoya holds a patent for a groundbreaking manufacturing method of a semiconductor device. This technology involves the activation annealing of n-type impurity ions and p-type impurity ions in separate steps. By adjusting the activation ratios, he achieved a remarkable 60% or greater for the n-type impurity ions in the field stop layer, and between 1 to 15% for the p-type impurity ions in the collector region. This innovative approach enables the formation of an Insulated Gate Bipolar Transistor (IGBT) with enhanced breakdown voltage and high-speed switching characteristics. Additionally, his use of a nickel silicide, titanium, nickel, and gold film stack for the collector electrode facilitates optimal ohmic contact with the collector region.

Career Highlights

Norio has made significant strides in his career while working with Renesas Technology Corporation, where he focuses on semiconductor advancements. His patent illustrates his commitment to improving device design and efficiency.

Collaborations

Throughout his professional journey, Norio has collaborated with esteemed colleagues such as Isao Miyashita and Yuji Fujii. Their joint efforts have fostered an environment of innovative thinking and problem-solving, contributing to the success of their projects within the semiconductor industry.

Conclusion

Norio Hosoya's inventive contributions are pivotal in the realm of semiconductor manufacturing. His innovative patent reflects his expertise and dedication to enhancing technology that is crucial for modern electronic devices. His collaborations continue to inspire advancements in the industry, making him a noteworthy figure among inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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