The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Aug. 03, 2007
Isao Miyashita, Tokyo, JP;
Yuji Fujii, Tokyo, JP;
Hajime Ebara, Tokyo, JP;
Katsuo Ishizaka, Tokyo, JP;
Norio Hosoya, Tokyo, JP;
Hidekazu Okuda, Tokyo, JP;
Isao Miyashita, Tokyo, JP;
Yuji Fujii, Tokyo, JP;
Hajime Ebara, Tokyo, JP;
Katsuo Ishizaka, Tokyo, JP;
Norio Hosoya, Tokyo, JP;
Hidekazu Okuda, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (ntype semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (ptype semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile