Atsugi, Japan

Noriaki Uto

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2010-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noriaki Uto. Retrieved from https://idiyas.com/inventor/noriaki-uto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 25.0

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Isehara, JP (2010 - 2012)
  • Kanagawa, JP (2013)
  • Atsugi, JP (2016)

Company Filing History:


Years Active: 2010-2016

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4 patents (USPTO):Explore Patents

Title: Noriaki Uto: Innovator in Transparent Conductive Films

Introduction

Noriaki Uto is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of transparent conductive films. With a total of 4 patents to his name, Uto's work has paved the way for advancements in electronic devices and display technologies.

Latest Patents

Uto's latest patents include innovations such as a light-transmitting conductive film, a display device, an electronic device, and a manufacturing method for light-transmitting conductive films. The primary objective of his work is to provide a transparent conductive film that exhibits favorable transparency and conductivity at a low cost. He aims to reduce the resistivity of a transparent conductive film formed using conductive oxynitride that includes zinc and aluminum. By incorporating aluminum and nitrogen into the film, Uto has successfully developed a method that allows for reduced resistivity. Additionally, he has discovered that heat treatment after the formation of the film can further enhance its conductivity.

Another notable patent involves a method for manufacturing a silicon-on-insulator (SOI) substrate. This invention focuses on creating an SOI substrate that includes a semiconductor layer which is efficiently planarized. The method involves several steps, including irradiating a bond substrate with accelerated ions, bonding the substrate with an insulating layer, and splitting the bond substrate to leave a semiconductor layer bonded to the base substrate. Uto's innovative approach ensures that the surface of the semiconductor layer is effectively planarized.

Career Highlights

Noriaki Uto is currently associated with Semiconductor Energy Laboratory Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has garnered attention for its practical applications in various electronic devices.

Collaborations

Uto collaborates with talented individuals in his field, including Yuta Endo and Satohiro Okamoto. Their combined expertise contributes to the advancement of innovative technologies in the semiconductor industry.

Conclusion

Noriaki Uto's contributions to the field of transparent conductive films and semiconductor technology are noteworthy. His innovative patents and collaborative efforts continue to influence the development of advanced electronic devices. Uto's work exemplifies the spirit of innovation that drives progress in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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