This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Norbert Seifert: Innovator in Semiconductor Technology
Introduction
Norbert Seifert is a prominent inventor based in Beaverton, OR (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
Norbert Seifert holds a patent for "Amorphized subfins using backside implantation." This patent describes techniques to form semiconductor devices that include subfins that are at least partially amorphized. The process involves a backside dopant implantation using dopants such as germanium to create amorphous semiconductor material in the subfins. The semiconductor device includes a gate structure around a semiconductor region formed from a fin of semiconductor material. The fin features a subfin that is laterally adjacent to a dielectric fill. The backside ion implantation process is utilized to implant dopants into the subfin, forming an amorphized portion that may extend from the bottom surface of the subfin to just under the gate structure.
Career Highlights
Norbert Seifert is currently employed at Intel Corporation, where he continues to advance semiconductor technology. His work has been instrumental in developing techniques that enhance the performance and efficiency of semiconductor devices.
Collaborations
Norbert has collaborated with notable coworkers, including Adam Neale and Soonyoung Lee, contributing to various projects within the semiconductor field.
Conclusion
Norbert Seifert's innovative work in semiconductor technology, particularly through his patent on amorphized subfins, showcases his expertise and commitment to advancing the industry. His contributions at Intel Corporation and collaborations with fellow inventors highlight his significant role in shaping the future of semiconductor devices.