Nobuyuki Nagayama

Title: Nobuyuki Nagayama: Innovator in Anodized Titanium Materials

Introduction

Nobuyuki Nagayama is a notable inventor based in Miyagi, Japan. He has made significant contributions to the field of materials science, particularly in the development of anodized titanium materials. His innovative approach has led to advancements that enhance the properties and applications of titanium.

Latest Patents

Nagayama holds a patent for an anodized titanium material and the method for producing the same. This patent describes an anodized titanium material that includes a titanium base material and an anodized titanium layer. The anodized titanium layer is characterized by its porous structure and impressive properties, including a withstand voltage of 500 V or more at 25° C., a Vickers hardness of 200 or more, and a film thickness ranging from 20 μm to less than 80 μm. The surface roughness is meticulously controlled, with an arithmetic average roughness Ra of less than 1.6 μm and a maximum height roughness Rz of less than 6.3 μm. Notably, the structure of the anodized titanium oxide layer is designed to prevent the formation of pore sections capable of including a circle with a diameter of 0.5 μm or more.

Career Highlights

Throughout his career, Nobuyuki Nagayama has worked with esteemed organizations such as the Yamaguchi Prefectural Industrial Technology Institute and Sanwa Industry Co., Ltd. His experience in these institutions has allowed him to refine his expertise in materials technology and innovation.

Collaborations

Nagayama has collaborated with notable colleagues, including Takehiko Muranaka and Kouji Niimi. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Nobuyuki Nagayama's work in anodized titanium materials showcases his innovative spirit and dedication to advancing materials science. His contributions have the potential to impact various industries, making him a significant figure in the field.