Nobuto Nakanishi

Title: Nobuto Nakanishi: Innovator in Semiconductor Technology

Introduction

Nobuto Nakanishi is a prominent inventor based in Ibaraki, Japan, known for his significant contributions to semiconductor technology. With a total of 2 patents, Nakanishi has focused on improving the reliability and efficiency of semiconductor devices.

Latest Patents

Nakanishi's latest patents include a method of manufacturing semiconductor devices aimed at enhancing reliability. This patent describes a process that involves forming a control gate electrode for a memory cell on a semiconductor substrate, utilizing a first insulating film. It also details the formation of a memory gate electrode adjacent to the control gate, along with n-type semiconductor regions for source or drain created through ion implantation. Another notable patent addresses a semiconductor device featuring an LDMOSFET, which incorporates a source electrode at the back surface. This design reduces electric resistance by employing a poly-silicon buried plug, heavily doped with boron, to connect the source contact region to the source electrode.

Career Highlights

Nakanishi is currently associated with Renesas Electronics Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more reliable and efficient.

Collaborations

Nakanishi has collaborated with notable colleagues, including Yoshiyuki Kawashima and Akio Nishida, contributing to various projects that enhance semiconductor technology.

Conclusion

Nobuto Nakanishi's work in semiconductor technology exemplifies innovation and dedication to improving device reliability. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing, positioning him as a key figure in the industry.