Palo, CA, United States of America

Nobuo Tanba


Average Co-Inventor Count = 7.1

ph-index = 8

Forward Citations = 201(Granted Patents)


Location History:

  • Ohme, JP (1987 - 1991)
  • Alto, CA (US) (1994)
  • Palo Alto, CA (US) (1992 - 2004)
  • Palo, CA (US) (2005)

Company Filing History:


Years Active: 1987-2005

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11 patents (USPTO):Explore Patents

Title: **Innovator Nobuo Tanba: Pioneer in Semiconductor Memory Technology**

Introduction

Nobuo Tanba, an accomplished inventor based in Palo, California, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 11 patents, his work primarily focuses on innovative semiconductor memory devices, enhancing their efficiency and performance in modern applications.

Latest Patents

Among his notable inventions is a groundbreaking semiconductor memory device designed to prevent the unwanted invasion of minority carriers from the substrate into the components of the device. This invention is applicable to both Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM) technologies.

Key aspects of this patent include the introduction of a buried layer beneath at least one component of the peripheral circuit and memory array. This buried layer, which shares the same conductivity type as the substrate but boasts a higher impurity concentration, acts as a shield against minority carrier penetration. Additionally, Nobuo's invention features first carrier-absorbing areas that are strategically located to absorb minority carriers between the memory array and the switching circuit, along with second carrier-absorbing areas encircling the device's input protective elements. Furthermore, he has developed a unique approach involving a plurality of isolation regions of the same conductivity type with unequal voltages applied, further enhancing the device's operational stability.

Career Highlights

Throughout his career, Nobuo Tanba has worked with prominent companies in the semiconductor industry, including Hitachi, Ltd. and Renesas Technology Corporation. His experience at these leading organizations has contributed significantly to his expertise and his capacity to innovate within the field.

Collaborations

Nobuo's work has not been undertaken in isolation; he has collaborated with accomplished professionals such as Shinji Nakazato and Hideaki Uchida. These collaborations have fostered an environment of shared knowledge and ideas, resulting in enhanced semiconductor innovations.

Conclusion

Nobuo Tanba stands as a notable figure in the realm of semiconductor technology, with his inventive spirit driving advancements that impact various electronic devices. His patents, particularly those involving semiconductor memory devices, not only underscore his ingenuity but also his commitment to pushing the boundaries of technology for improved efficiency and functionality. As the tech world evolves, the contributions of inventors like Nobuo Tanba will undoubtedly lay the groundwork for future innovations.

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