Nobuhira Abe

This inventor holds 18 USPTO granted patents and 2 published patent applications, plus 1 CIPO patent and 1 EPO patent, primarily in Silicon Clathrate Production. Top assignee: Toyota Jidosha Kabushiki Kaisha. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuhira Abe. Retrieved from https://idiyas.com/inventor/nobuhira-abe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 18 (Patent Applications = 2)

% Patents Active = 77.8

CIPO Patents = 1

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 1.2

ph-index = 2

Forward Citations = 17(Granted Patents)

Location History:

Nishikamo-gun, JP (2011)
Miyoshi, JP (2016 - 2023)
Toyota, JP (2018 - 2024)

Company Filing History:

18 out of 39,010

Toyota Jidosha Kabushiki Kaisha

patents

Years Active: 2011-2026

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Areas of Expertise:

Silicon Clathrate

Electrode Stacking

Single Crystal

Battery Materials

Wafer Carrier

Fuel Cell

Manufacturing Apparatus

Placement Device

Non-Contact Transfer

Stack Holding

Production Method

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12686579 - Sheet takeout method (2026-07-21),

2. 12398007 - Electrode stacking apparatus (2025-08-26),

3. 12322793 - Apparatus for producing guest-free silicon clathrate (2025-06-03),

4. 11955628 - Method of producing guest-free silicon clathrate, apparatus for producing guest-free silicon clathrate (2024-04-09),

5. 11575144 - Battery material stacking system (2023-02-07),

6. 11469437 - Electrode stack manufacturing apparatus (2022-10-11),

7. 11274002 - Placement method (2022-03-15),

8. 11241872 - Apparatus for manufacturing stack of sheet-shaped electrodes (2022-02-08),

9. 11223062 - Stack holding apparatus (2022-01-11),

10. 11192728 - Placement device and placement method (2021-12-07),

11. 10910664 - Apparatus for manufacturing stack of sheet-shaped electrodes (2021-02-02),

12. 10106910 - Method for producing SiC single crystal (2018-10-23),

13. 10023975 - Method for producing SiC single crystal (2018-07-17),

14. 9982366 - Single crystal production apparatus (2018-05-29),

15. 9938636 - Single crystal production apparatus (2018-04-10),

Title: Inventor Nobuhira Abe: Pioneering Innovations in Miyoshi

Introduction: Nobuhira Abe is a distinguished inventor hailing from Miyoshi, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nobuhira Abe holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the tech industry, Abe has worked with leading research institutions and universities to develop cutting-edge solutions that have revolutionized various sectors.

Collaborations: Throughout his career, Nobuhira Abe has collaborated with top companies, such as tech giants and startups, to bring his inventions to the market, fostering a culture of innovation and progress.

Conclusion: Nobuhira Abe's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology in Miyoshi and beyond.

Profile summary based on public USPTO records.