The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jan. 20, 2016
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventors:
Kouji Yamashiro, Miyoshi, JP;
Nobuhira Abe, Miyoshi, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 9/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 9/06 (2013.01); C30B 29/36 (2013.01);
Abstract
A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.