The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jan. 19, 2016
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventor:
Nobuhira Abe, Toyota, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 29/36 (2006.01); C30B 9/06 (2006.01); C30B 15/14 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 9/06 (2013.01); C30B 15/14 (2013.01);
Abstract
A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal including connecting the seed crystal to a seed crystal holder, disposing a cooling mechanism on the seed crystal holder, and promoting cooling of the seed crystal holder by the cooling mechanism in accordance with an increase in the pulling amount of the SiC single crystal.