Komae, Japan

Nobuaki Otsuka

This inventor holds 27 USPTO granted patents and 1 published patent application, primarily in Semiconductor Memory. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1990-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuaki Otsuka. Retrieved from https://idiyas.com/inventor/nobuaki-otsuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 55.6

Average Co-Inventor Count = 1.8

ph-index = 11

Forward Citations = 313(Granted Patents)


Location History:

  • Yokohama, JP (1990)
  • Menlo Park, CA (US) (1996)
  • Kawasaki, JP (2000 - 2001)
  • Tokyo, JP (2001 - 2011)
  • Komae, JP (2001 - 2012)

Company Filing History:


Years Active: 1990-2012

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Areas of Expertise:
Semiconductor Memory
Nonvolatile Memory
Fuse Element
SRAM
Memory Cell
Integrated Circuit
Level Shifter
Resistance Division
27 patents (USPTO):Explore Patents

Title: **Innovations of Nobuaki Otsuka: A Pioneer in Semiconductor Technology**

Introduction

Nobuaki Otsuka, located in Komae, Japan, is a prominent inventor in the field of semiconductor technology. With an impressive portfolio of 27 patents, he has made significant contributions that not only enhance the functionality of semiconductor devices but also pave the way for future advancements in the industry.

Latest Patents

Nobuaki Otsuka's latest patents include innovative solutions that address critical challenges in semiconductor design. One of his notable inventions is the "Semiconductor Electrically Programmable Fuse Element with Amorphous Silicon Layer After Programming and Method of Programming the Same." This invention features a fuse link formed between two terminals which incorporates a polysilicon layer and a metal-containing layer on top. Notably, part of the fuse link comprises an amorphous silicon layer, enhancing its reliability and performance.

Another significant patent is the "Semiconductor Memory Device with Improved Resistance to Disturbance and Improved Writing Characteristic." This invention provides a novel architecture that includes two inverters connected crosswise, along with power supply control circuits that regulate the voltages for optimal memory cell operation during write processes.

Career Highlights

Nobuaki Otsuka is associated with Kabushiki Kaisha Toshiba, a leading player in the semiconductor market. His work at Toshiba has not only solidified his reputation as an innovator but has also contributed to the company’s standing as a technological leader. His patents showcase his commitment to research and development in semiconductor technology.

Collaborations

Throughout his career, Nobuaki has collaborated with notable colleagues, including Osamu Hirabayashi and Shigeru Atsumi. This teamwork has led to the successful development of groundbreaking technologies and reflects the collaborative spirit prevalent in the research and innovation landscape.

Conclusion

Nobuaki Otsuka exemplifies the essence of innovation in semiconductor technology. His patents not only contribute to the current technological landscape but also inspire future advancements. With a solid foundation in research and collaboration, Otsuka continues to lead the way for new inventions that push the boundaries of what is possible in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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