Location History:
- Ganei Tikva, IL (2009)
- Ganey Tikva, IL (2013 - 2016)
Company Filing History:
Years Active: 2009-2016
Title: The Innovations of Noam Sivan
Introduction
Noam Sivan is a notable inventor based in Ganey Tikva, Israel. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on enhancing the performance and reliability of MOSFET devices.
Latest Patents
One of his latest patents is titled "Method and control device for recovering NBTI/PBTI related parameter degradation in MOSFET devices." This invention provides a method for recovering parameter degradation in MOSFET devices by operating them in a standby mode, exiting this mode, and holding them in an active state for a predetermined time span before returning to operational mode. Another significant patent is the "Multi-level clock signal distribution network and integrated circuit." This invention comprises a multi-level clock signal distribution network designed to efficiently distribute clock signals to various clocked circuits, enhancing the overall performance of integrated circuits.
Career Highlights
Noam Sivan is currently employed at Freescale Semiconductor, Inc., where he continues to innovate and develop advanced semiconductor technologies. His expertise in the field has positioned him as a key contributor to the company's research and development efforts.
Collaborations
Throughout his career, Noam has collaborated with talented individuals such as Sergey Sofer and Lior Moheban. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.
Conclusion
Noam Sivan's contributions to the field of semiconductor technology are noteworthy, and his patents reflect his commitment to advancing the industry. His work continues to influence the development of more efficient and reliable electronic devices.